TO-CAN Based Tunable Laser Optical Sub-Assembly TOSA TLCBD Simple tuning algorithm

TO-CAN Based Tunable Laser Optical Sub-Assembly TOSA TLCBD Simple tuning algorithm

 

Key Features

  • Up to 16 channels at 100 GHz spacing or up to 32 channels at
  • 50GHz spacing
  • C- or L-band
  • Simple tuning algorithm
  • 2.5 Gbps direct modulation
  • Low-cost TO-can based optical subassembly

 

Applications

  • NGPON2
  • WDM-PON
  • Optical interconnects
  • DWDM sparing

 

Description

Widely wavelength tunable semiconductor lasers are key components for next-generation optical networks. Conventional tunable lasers require complex fabrication processes such as non-uniform gratings and multiple epitaxial growths, and need multiple electrodes with complex control algorithms for wavelength tuning. As the dense wavelength division multiplexing (DWDM) technology extends towards access and data center networks, the cost reduction and operational simplicity have become more and more important. We has developed a simple and compact tunable laser based on patented proprietary technologies. It consists of a half-wave coupled V-cavity laser with only three electrodes: one for gain and direct modulation, one for channel selection corresponding to the ITU grid, and the third for fine tuning when needed. The laser structure does not involve any grating or epitaxial regrowth, and has a size of only about 500hm x 300hm. The advantages of compactness, fabrication simplicity and easy wavelength control offer cost-effective tunable laser solutions for many applications in access and data center networks, and beyond. These series Transmitter Optical Sub-Assembly (TOSA) is based on an 8-pin TO-CAN package that offers further cost reduction compared to our previously released TLDX15 series tunable TOSA. It comprises a V-cavity edge-emitting tunable laser, a power monitoring photodiode, an isolator, and a TEC controller, with an LC connector. Currently it can provide up to 16 channels at 100GHz spacing or 32 channels at 50GHz spacing in C- or L- band (other wavelength bands available on request), with a customer specified starting wavelength. The laser chip can be operated in semi-cooled condition at 40-60℃ while the ambient operating temperature is between 0 and 70℃.

 

Specifications

Parameters Min. Typ. Max. Unit
Optical Output Power
0
dBm
Ambient Operating Temperature 0 - 70
Gain Forward Bias Current 25 30 50
mA
Channel Selector Current 20 - 100
mA
Fine Tuning Current 20 25 40
mA
LD Forward Bias Voltage - - 2.3 V
Modulation Data Rate 2.5 (higher data rates under development)
Gbps
Wavelength C- or L-band (other wavelengths available on request)  
Channel Spacing 50 or 100 GHz
Number of Channels Up to 16@100GHz, or 32@50GHz  
Side Mode Suppression Ratio 35 38-40 -
dB
Optical Isolation 25 - -
dB
Relative Intensity Noise - - -135
dB/Hz
Power Monitor Current 20 - 500
μA
Power Monitor Dark Current - - 100 nA
TEC Current - 0.5 0.9 A
TEC Voltage - - 1.2 V
Total Power Consumption (PLD + PTEC) - 0.8 1.5 W
Thermistor B constant - 4050 - K
Thermistor Resistance @25C 9.5 10 10.5

 

$680.00

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