Tunable EML Laser Transmitter Optical Sub-Assembly TOSA TLDXE Series Tunable EML chip

Tunable EML Laser Transmitter Optical Sub-Assembly TOSA TLDXE Series

 

Key Features

  • Up to 40 channels at 100GHz spacing or up to 80 channels at 50GHz spacing
  • O-band or C-band
  • Tunable EML chip
  • Simple tuning algorithm
  • 10-25Gbps EA modulation
  • Small package size

 

Applications

  • WDM-PON
  • Colorless ONU
  • Intelligent optical interconnects
  • DWDM sparing
  • Dynamic wave length provisioning
  • Wavelength routing

 

Description
Widely wavelength tunable semiconductor lasers are key components for next-generation optical networks. Conventional tunable lasers require complex fabrication processes such as non-uniform gratings and multiple epitaxial growths, and need multiple electrodes with complex control algorithms for wavelength tuning. As the dense wavelength division multiplexing (DWDM) technology extends towards access and data center networks, the cost reduction and operational simplicity have become more and more important. Lightip has developed a simple and compact tunable laser based on patented proprietary technologies. It consists of a half-wave coupled V-cavity laser. The laser structure does not involve any grating or epitaxial regrowth, and has a much smaller size compared to conventional tunable lasers. The advantages of compactness, fabrication simplicity and easy wavelength control offer cost-effective tunable laser solutions for many applications in metro/access networks, datacenters and beyond. The TLDXE series Transmitter Optical Sub-Assembly (TOSA) integrates a V-cavity edge-emitting tunable EML laser, an isolator, and a TEC controller. The connector type can be chosen from LC, SC or fiber-pigtail with FC/PC or FC/APC connector. It can provide up to 40 channels at 100GHz spacing or 80 channels at 50GHz spacing in C- or O- band (other wavelength bands available on request). Currently the tunable EML is available for 10Gbps and 25Gbps data rates.


Specifications

Parameters Min. Typ. Max. Unit
Optical Output Power  

-3(C-band)

0(O-band)

 
dBm
LD Operating Temperature 10 35 65
Ambient Operating Temperature 0 - 70
Gain Forward Bias Current 25 30 100
mA
Channel Selector Current 20 - 140
mA
Fine Tuning Current 20 25 50
mA
LD Forward Bias Voltage - - 2.3 V
Modulation Data Rate 10-25
Gbps
Wavelength C- or O-band (other wavelengths available on request  
Channel Spacing 50 or 100
GHz
Number of Channels 16, 32, 40 @100 GHz, or 32, 64, 80 @50GHz  
Side Mode Suppression Ratio 35 38-40 -
dB
Optical Isolation 25 - -
dB
Relative Intensity Noise - - -135
dB/Hz
TEC Current - 0.7 1 A
TEC Voltage - 2.2 3 V
Thermistor B Constant - 4050 - K
Thermistor Resistance @25C 9.5 10 10.5

 

 

EML vs DML: What Are They?

DML refers to a directly modulated laser. This laser is also called a distributed-feedback laser diode (DFB) since it uses a distributed feedback structure for direct modulation. A DML uses a single chip with a simple electrical circuit design, so it can be an optimal choice for a compact circuit configuration with low power consumption.

EML refers to an electro-absorption-modulated laser. An EML diode is structurally similar to a DML one. The difference is that there is an electro-absorption modulator (EAM) integrated into a single chip. The laser diode operates under a continuous wave (CW) condition. In an EML diode, signal modulation is on the EMA section instead of the electrical section. It means that optical output signals are generated when input on/off signals are applied to the EAM section.


EML vs DML: What Are the Benefits?


EMLs feature low chromatic dispersion since the process of modulation will not change laser properties constantlyaEMLs feature low chromatic dispersion since the process of modulation will not change laser properties constantly.

EMLs can operate at higher modulation speeds and have a much lower chirp compared to DML.
EMLs are an ideal choice for high-speed and long-distance transmission because of lower dispersion in the fiber.
DMLs tend to be much more stable than lasers like FP abd DBR as the grating and the reflection are not only at the two ends of the cavity of the laser but are almost continuous along the cavity.
DMLs feature a single chip and provide a simple circuit design, making them more compact and fit into more small-sized configurations.
DMLs generally cost relatively less and have low power consumption since optical signals are modulated by current change in a DML.
Compared to Fabry-Perot lasers, DMLs have a narrower spectral line width, meaning higher modulation speed and longer transmission distance.
EML vs DML: What Are the Limits?
EMLs are more power-consuming as there is an electro-absorption modulator (EAM) integrated within the chip.
EMLs require a more complex electrical configuration and diode layout.
EMLs generally cost more as they use electric absorption to modulate signals.
There is high chromatic dispersion in DMLs because direct modulation changes the laser properties directly.
DMLs have a relatively low-frequency response and extinction ratio as they are all limited by the relaxation frequency.
Associated frequency shifts, coupled with dispersion in the fiber, cause the performance of a DML to degrade over longer reaches (>10km).

 

 

$680.00

Add to Cart: