Hamamatsu S3584-08 Large photosensitive area Si PIN photodiodes

Features
- Sensitivity matching with BGO and CsI(TI) scintillators
- Low capacitance
- High-speed response
- High stability
- Good energy resolution

 

Specifications

Photosensitive area 28 × 28 mm
Package Ceramic
Package category --
Cooling Non-cooled
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 10 MHz
Terminal capacitance (typ.) 300 pF
Noise equivalent power (typ.) 8.6×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted

$299.00

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