Hamamatsu Photodiode G12180-030A Photosensitive area: φ3 mm

Hamamatsu Photodiode G12180-030A Photosensitive area: φ3 mm

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from φ0.3 mm to φ5 mm.

Features
- Low noise, low dark current
- Low terminal capacitance
- Photosensitive area: φ3 mm
- Low noise

Applications
-Laser monitors
-Optical power meters
-Laser diode life test
-NIR (near infrared) photometry
-Optical communications

Options
-Amplifier for InGaAs PIN photodiode
-Heatsink for one-stage TE-cooled type
-Heatsink for two-stage TE-cooled type
-Temperature controller for TE-cooler type

 

$169.00

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