1510nm CWDM DFB 2mW 2.5Gb/s Laser with isolator
Features
- High reliability DFB laser chips
- Low noise, Low distortion Low threshold current
- Integrated Optical Isolator
- High responsivity,Low return loss
- Low dark current, Low capacitance
- Laser Welding, High reliability And Long operation life
- InGaAs PIN-PD as Receiver
Absolute Maximum Ratings (Tc=25℃)
|
Parameter
|
Symbol
|
Min
|
Type
|
Max
|
Unit
|
|
Reverse Voltage（LD）
|
Vr(LD)
|
-
|
-
|
2
|
V
|
|
Forward Current（LD）
|
If(LD)
|
-
|
-
|
120
|
mA
|
|
Reverse Voltage（MPD）
|
Vr(PD)
|
-
|
-
|
15
|
V
|
|
Forward Current（MPD）
|
If(PD)
|
-
|
-
|
2
|
mA
|
|
Storage Temperature
|
Tstg
|
-40
|
-
|
+85
|
℃
|
|
Operating Temperature
|
Topr
|
-20
|
-
|
70
|
℃
|
|
Lead Soldering Temperature/Time
|
Ts
|
-
|
260/10 or 360/5
|
-
|
℃/S
|
|
Fiber Bend Radius
|
R
|
15
|
-
|
-
|
mm
|
Transmitter Optical and Electrical Characteristics (Tc=25℃)
|
Parameter
|
Symbol
|
Min
|
Type
|
Max
|
Unit
|
Test Condition
|
|
Center Wavelength
|
λc
|
1507
|
1510
|
1513
|
nm
|
CW, If=Ith+20mA
|
|
Threshold Current
|
Ith
|
3
|
-
|
15
|
mA
|
CW
|
|
-
|
-
|
50
|
mA
|
CW,T=85℃
|
|
Optical Output Power
|
Pf
|
-
|
2.0
|
-
|
mW
|
CW, If=23~27mA
|
|
Rise/Fall Time(20-80%)
|
Tr/Tf
|
-
|
-
|
120
|
pS
|
If=Ith, Po=Pf, 50 Ohm
|
|
Monitor Current
|
Im
|
100
|
-
|
1000
|
uA
|
CW, If=Ith+20mA
|
|
Capacitance
|
C
|
-
|
10
|
15
|
PF
|
VRD=5V, f=1MHz
|
|
Dark Current
|
Id
|
-
|
-
|
100
|
nA
|
VRD=5V
|
|
Spectral Width(-20dB)
|
Δλ
|
-
|
0.3
|
0.5
|
nm
|
CW, If=Ith+20mA
|
|
Slope Efficiency
|
SE
|
0.09
|
-
|
-
|
W/A
|
CW, If=Ith+20mA
|
|
Tracking Error
|
TE
|
-1.5
|
-
|
1.5
|
dB
|
CW, Im=Constant &
If=Ith+20mA
|
|
Bandwidth(-3dB)
|
BW
|
-
|
2.5
|
-
|
GHz
|
|
|
Side Mode
Suppression Ratio
|
SMSR
|
30
|
-
|
-
|
dB
|
CW,If=Ith+20mA
|
|
Optical Isolation
|
ISO
|
30
|
-
|
-
|
dB
|
|
|
Composite second-order
beat
|
CSO
|
-
|
-
|
-50
|
dBc
|
2 tone test,
f1=2200MHz, f2=2202.5MHz, OMI=20%/tone
|
|
Composite triple beat
distortion
|
CTB
|
-
|
-
|
-60
|
dBc
|
2 tone test,
f1=2200MHz, f2=2202.5MHz, OMI=20%/tone
|
|
Relative Intensity Noise
|
RIN
|
-
|
-
|
-134
|
dB/Hz
|
|
Receiver Optical and Electrical Characteristics (Tc=25℃)
|
Parameter
|
Symbol
|
Min
|
Type
|
Max
|
Unit
|
Test Condition
|
|
Detection range
|
λ
|
1270
|
-
|
1490
|
nm
|
|
|
1530
|
-
|
1620
|
nm
|
|
|
Responsivity
|
Res
|
0.85
|
-
|
-
|
A/W
|
VR=5V, λ=1310nm
|
|
Dark current
|
Id
|
-
|
-
|
1.0
|
nA
|
VR=5V
|
|
Bandwidth(-3dB)
|
BW
|
-
|
2.5
|
-
|
GHz
|
|
|
Saturation power
|
P
|
3
|
-
|
-
|
dBm
|
|
|
Capacitance
|
C
|
-
|
0.6
|
1.0
|
pF
|
VR=5V
|
|
IMD2 (1*)
|
IMD2
|
-
|
-70
|
-
|
dBc
|
λ=1310nm
|
|
IMD3 (1*)
|
IMD3
|
-
|
-80
|
-
|
dBc
|
λ=1310nm
|
|
Return Loss
|
RL
|
40
|
-
|
-
|
dB
|
λ=1310nm
|
