135nm/1370nm/1550nm High-Reliability DFB Laser Chips WDM Laser Module
Features
- 1350/1370/1550nm High-Reliability DFB LaserChips
- Low noise,Low distortion,Low threshold current
- Integrated Optical Isolator
Absolute Maximum Ratings (Tc=25℃)
Parameter
|
Symbol
|
Min
|
Type
|
Max
|
Unit
|
Reverse Voltage(LD)
|
Vr(LD)
|
-
|
-
|
2
|
V
|
Forward Current(LD)
|
If(LD)
|
-
|
-
|
120
|
mA
|
Reverse Voltage(MPD)
|
Vr(PD)
|
-
|
-
|
15
|
V
|
Forward Current(MPD)
|
If(PD)
|
-
|
-
|
2
|
mA
|
Storage Temperature
|
Tstg
|
-40
|
-
|
+85
|
℃
|
Operating Temperature
|
Topr
|
-20
|
-
|
70
|
℃
|
Lead Soldering Temperature/Time
|
Ts
|
-
|
260/10 or 360/5
|
-
|
℃/S
|
Fiber Bend Radius
|
R
|
15
|
-
|
-
|
mm
|
Receiver Optical and Electrical Characteristics (Tc=25℃)
Parameter
|
Symbol
|
Min
|
Type
|
Max
|
Unit
|
Test Condition
|
Center Wavelength |
λ1
|
1347
|
1350
|
1353
|
nm
|
CW, Po= Pf
|
λ2
|
1367
|
1370
|
1373
|
nm
|
CW, Po= Pf
|
λ3
|
1547
|
1550
|
1553
|
nm
|
CW, Po= Pf
|
Threshold Current |
Ith |
3
|
|
15
|
mA
|
CW, T=25℃
|
|
|
50
|
mA
|
CW, T=70℃
|
Forward Voltage
|
Vop
|
|
1.2
|
1.5
|
V
|
|
Optical Output Power
|
Po
|
|
8
|
|
mW
|
If=35~45mA
|
Rise time/Fall time
(20-80%)
|
Tr/Tf
|
|
|
120
|
pS
|
If=Ith,Po=Pf, 50 Ohm
|
Monitor Current
|
Im
|
100
|
|
1000
|
uA
|
CW, If=Ith+20mA
|
Capacitance
|
CPD
|
|
10
|
15
|
PF
|
VRD=5V,F=1MHz
|
Dark Current
|
Id
|
|
|
100
|
nA
|
VRD=5V
|
Spectral Width(RMS-20dB)
|
△λ
|
|
0.5
|
1
|
nm
|
CW, If=Ith+20mA
|
Bandwidth
|
BW
|
|
2.5
|
|
GHz
|
|
Slope Efficiency
|
SE
|
0.20
|
|
|
W/A
|
CW, If=Ith+20mA
|
Tracking Error
|
TE
|
-1.5
|
|
1.5
|
dB
|
CW, Im=Constant &
If=Ith+20mA
|
Isolation
|
ISO
|
30
|
|
|
dB
|
|
Side Mode Suppression
Ration
|
SMSR
|
30
|
|
|
dB
|
CW, If=Ith+20mA
|
Composite second-order
beat
|
CSO
|
|
|
-50
|
dBc
|
2 tone test,
f1=2200MHz, f2=2202.5MHz, OMI=20%/tone
|
Composite triple beat
distortion
|
CTB
|
|
|
-60
|
dBc
|
2 tone test,
f1=2200MHz, f2=2202.5MHz, OMI=20%/tone
|
Relative Intensity Noise
|
RIN
|
|
|
-134
|
dB/Hz
|
|