10G InGaAs pin diode

10G InGaAs pin diode
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10G InGaAs pin diode
larger image

10G InGaAs pin diode

 

Features

  • High responsivity，Low return loss
  • Low dark current, Low capacitance
  • Coaxial Package, Laser Welding
  • High reliability and long operation life

Applications

  • Analog Optical Receiver
  • Test Equipment

 

Absolute Maximum Ratings （Tc=25℃）

Parameter

Symbol

Ratings

Unit

Saturation Power

Ps

10

mW

Forward Current

If

10

mA

Reverse Voltage

Vr

30

V

Reverse Current

Ir

5

mA

Operating Temperature

Top

-40~+85

℃

Storage Temperature

Tstg

-40~+85

℃

 

Optical and Electrical Characteristics(Tc=25℃)

Parameter

Symbol

Min

Type

Max

Unit

Condition

Operating Wavelength

λ

1100

--

1700

nm

  

Responsivity

R

0.7

—

--

 A/W Vr=-5V，λ=1310nm

0.75

—

--

 Vr=-5V，λ=1550nm

Dark Current

Id

--

0.2

0.5

nA

Vr=5V

Capacitance

C

--

—

0.15

pF

Vr=5V, f=1MHz

Rise time/Fall time

Tr/Tf

--

--

0.3

ns

Vr=5V,10～90%

Bandwidth

Bw

10

--

--

GHz

Vr=5V,50Ω

Composite Second Order Beat

CSO

--

-70

--

dB

  

Composite Third Order Beat

CTB

--

-80

--

dB

  

Operating Voltage

V

--

-5

--

V

  

Optical Return Loss

RL

40

--

--

dB

λ=1310/1550nm

 

$19.00

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